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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
Lü, Yuan-Jie; Lin, Zhao-Jun; Yu, Ying-Xia; Meng, Ling-Guo; Cao, Zhi-Fang; Luan, Chong-Biao; Wang, Zhan-Guo
2012
Source PublicationChinese Physics B
Volume21Issue:9Pages:16741056
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23969
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lü, Yuan-Jie,Lin, Zhao-Jun,Yu, Ying-Xia,et al. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics[J]. Chinese Physics B,2012,21(9):16741056.
APA Lü, Yuan-Jie.,Lin, Zhao-Jun.,Yu, Ying-Xia.,Meng, Ling-Guo.,Cao, Zhi-Fang.,...&Wang, Zhan-Guo.(2012).A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics.Chinese Physics B,21(9),16741056.
MLA Lü, Yuan-Jie,et al."A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics".Chinese Physics B 21.9(2012):16741056.
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