SEMI OpenIR  > 中科院半导体材料科学重点实验室
Design of a three-layer hot-wall horizontal flow MOCVD reactor
Gu, Chengyan; Lee, Chengming; Liu, Xianglin
2012
Source PublicationJournal of Semiconductors
Volume33Issue:9Pages:093005
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23968
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Gu, Chengyan,Lee, Chengming,Liu, Xianglin. Design of a three-layer hot-wall horizontal flow MOCVD reactor[J]. Journal of Semiconductors,2012,33(9):093005.
APA Gu, Chengyan,Lee, Chengming,&Liu, Xianglin.(2012).Design of a three-layer hot-wall horizontal flow MOCVD reactor.Journal of Semiconductors,33(9),093005.
MLA Gu, Chengyan,et al."Design of a three-layer hot-wall horizontal flow MOCVD reactor".Journal of Semiconductors 33.9(2012):093005.
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