SEMI OpenIR  > 中科院半导体材料科学重点实验室
Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors
Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo
2012
Source PublicationJournal of Applied Physics
Volume112Issue:5Pages:00218979
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23967
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Luan, Chongbiao,Lin, Zhaojun,Feng, Zhihong,et al. Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors[J]. Journal of Applied Physics,2012,112(5):00218979.
APA Luan, Chongbiao.,Lin, Zhaojun.,Feng, Zhihong.,Meng, Lingguo.,Lv, Yuanjie.,...&Wang, Zhanguo.(2012).Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors.Journal of Applied Physics,112(5),00218979.
MLA Luan, Chongbiao,et al."Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors".Journal of Applied Physics 112.5(2012):00218979.
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