| Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors | |
| Luan, Chongbiao; Lin, Zhaojun; Feng, Zhihong; Meng, Lingguo; Lv, Yuanjie; Cao, Zhifang; Yu, Yingxia; Wang, Zhanguo | |
| 2012 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 112Issue:5Pages:00218979 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23967 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Luan, Chongbiao,Lin, Zhaojun,Feng, Zhihong,et al. Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors[J]. Journal of Applied Physics,2012,112(5):00218979. |
| APA | Luan, Chongbiao.,Lin, Zhaojun.,Feng, Zhihong.,Meng, Lingguo.,Lv, Yuanjie.,...&Wang, Zhanguo.(2012).Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors.Journal of Applied Physics,112(5),00218979. |
| MLA | Luan, Chongbiao,et al."Polarization Coulomb field scattering in In0.18Al 0.82N/AlN/GaN heterostructure field-effect transistors".Journal of Applied Physics 112.5(2012):00218979. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012192.pdf（905KB） | 限制开放 | License | Application Full Text | |||
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