SEMI OpenIR  > 中科院半导体材料科学重点实验室
Theoretical study of the effects of InAs/GaAs quantum dot layer
Gu, Yong-Xian; Yang, Xiao-Guang; Ji, Hai-Ming; Xu, Peng-Fei; Yang, Tao
2012
Source PublicationApplied Physics Letters
Volume101Issue:8Pages:081118
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23965
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Gu, Yong-Xian,Yang, Xiao-Guang,Ji, Hai-Ming,et al. Theoretical study of the effects of InAs/GaAs quantum dot layer[J]. Applied Physics Letters,2012,101(8):081118.
APA Gu, Yong-Xian,Yang, Xiao-Guang,Ji, Hai-Ming,Xu, Peng-Fei,&Yang, Tao.(2012).Theoretical study of the effects of InAs/GaAs quantum dot layer.Applied Physics Letters,101(8),081118.
MLA Gu, Yong-Xian,et al."Theoretical study of the effects of InAs/GaAs quantum dot layer".Applied Physics Letters 101.8(2012):081118.
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