| Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium | |
| He, W; Lu, S.L; Jiang, D.S; Dong, J.R; Tackeuchi, A; Yang, H | |
| 2012 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 112Issue:2Pages:023509 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23964 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | He, W,Lu, S.L,Jiang, D.S,et al. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium[J]. Journal of Applied Physics,2012,112(2):023509. |
| APA | He, W,Lu, S.L,Jiang, D.S,Dong, J.R,Tackeuchi, A,&Yang, H.(2012).Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium.Journal of Applied Physics,112(2),023509. |
| MLA | He, W,et al."Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium".Journal of Applied Physics 112.2(2012):023509. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012053.pdf（500KB） | 限制开放 | License | Application Full Text | |||
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