Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium | |
He, W; Lu, S.L; Jiang, D.S; Dong, J.R; Tackeuchi, A; Yang, H | |
2012 | |
Source Publication | Journal of Applied Physics
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Volume | 112Issue:2Pages:023509 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-05-07 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23964 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | He, W,Lu, S.L,Jiang, D.S,et al. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium[J]. Journal of Applied Physics,2012,112(2):023509. |
APA | He, W,Lu, S.L,Jiang, D.S,Dong, J.R,Tackeuchi, A,&Yang, H.(2012).Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium.Journal of Applied Physics,112(2),023509. |
MLA | He, W,et al."Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium".Journal of Applied Physics 112.2(2012):023509. |
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