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Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
He, W; Lu, S.L; Jiang, D.S; Dong, J.R; Tackeuchi, A; Yang, H
2012
Source PublicationJournal of Applied Physics
Volume112Issue:2Pages:023509
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23964
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
He, W,Lu, S.L,Jiang, D.S,et al. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium[J]. Journal of Applied Physics,2012,112(2):023509.
APA He, W,Lu, S.L,Jiang, D.S,Dong, J.R,Tackeuchi, A,&Yang, H.(2012).Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium.Journal of Applied Physics,112(2),023509.
MLA He, W,et al."Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium".Journal of Applied Physics 112.2(2012):023509.
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