SEMI OpenIR  > 中科院半导体材料科学重点实验室
Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces
Li, Li-Gong; Liu, Shu-Man; Luo, Shuai; Yang, Tao; Wang, Li-Jun; Liu, Feng-Qi; Ye, Xiao-Ling; Xu, Bo; Wang, Zhan-Guo
2012
Source PublicationNanoscale Research Letters
Volume7Pages:160
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23961
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Li-Gong,Liu, Shu-Man,Luo, Shuai,et al. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces[J]. Nanoscale Research Letters,2012,7:160.
APA Li, Li-Gong.,Liu, Shu-Man.,Luo, Shuai.,Yang, Tao.,Wang, Li-Jun.,...&Wang, Zhan-Guo.(2012).Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces.Nanoscale Research Letters,7,160.
MLA Li, Li-Gong,et al."Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces".Nanoscale Research Letters 7(2012):160.
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