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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng
2012
Source PublicationDigest of Technical Papers - Symposium on VLSI Technology
Pages97-98
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23957
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Han, Genquan,Su, Shaojian,Wang, Lanxiang,et al. Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer[J]. Digest of Technical Papers - Symposium on VLSI Technology,2012:97-98.
APA Han, Genquan.,Su, Shaojian.,Wang, Lanxiang.,Zhang, Zheng.,Xue, Chunlai.,...&Pan, Jisheng.(2012).Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer.Digest of Technical Papers - Symposium on VLSI Technology,97-98.
MLA Han, Genquan,et al."Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer".Digest of Technical Papers - Symposium on VLSI Technology (2012):97-98.
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