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Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing
Hu, Shaoxu; Han, Peide; Wang, Shuai; Mao, Xue; Li, Xinyi; Gao, Lipeng
2012
Source PublicationPhysica Status Solidi (A) Applications and Materials Science
Volume209Issue:12Pages:2521-2526
Subject Area光电子学
Indexed ByEI
Date Available2013-05-07
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23945
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Hu, Shaoxu,Han, Peide,Wang, Shuai,et al. Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing[J]. Physica Status Solidi (A) Applications and Materials Science,2012,209(12):2521-2526.
APA Hu, Shaoxu,Han, Peide,Wang, Shuai,Mao, Xue,Li, Xinyi,&Gao, Lipeng.(2012).Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing.Physica Status Solidi (A) Applications and Materials Science,209(12),2521-2526.
MLA Hu, Shaoxu,et al."Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing".Physica Status Solidi (A) Applications and Materials Science 209.12(2012):2521-2526.
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