| Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing | |
| Hu, Shaoxu; Han, Peide; Wang, Shuai; Mao, Xue; Li, Xinyi; Gao, Lipeng | |
| 2012 | |
| Source Publication | Physica Status Solidi (A) Applications and Materials Science
 |
| Volume | 209Issue:12Pages:2521-2526 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Date Available | 2013-05-07 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23945 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Hu, Shaoxu,Han, Peide,Wang, Shuai,et al. Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing[J]. Physica Status Solidi (A) Applications and Materials Science,2012,209(12):2521-2526. |
| APA | Hu, Shaoxu,Han, Peide,Wang, Shuai,Mao, Xue,Li, Xinyi,&Gao, Lipeng.(2012).Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing.Physica Status Solidi (A) Applications and Materials Science,209(12),2521-2526. |
| MLA | Hu, Shaoxu,et al."Structural and optoelectronic properties of selenium-doped silicon formed using picosecond pulsed laser mixing".Physica Status Solidi (A) Applications and Materials Science 209.12(2012):2521-2526. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012225.pdf（487KB） | 限制开放 | License | Application Full Text | |||
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