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Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2
Tongay, Sefaattin; Zhou, Jian; Ataca, Can; Lo, Kelvin; Matthews, Tyler S; Li, Jingbo; Grossman, Jeffrey C; Wu, Junqiao
2012
Source PublicationNano Letters
Volume12Issue:11Pages:5576-5580
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2013-04-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23936
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Tongay, Sefaattin,Zhou, Jian,Ataca, Can,et al. Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. Nano Letters,2012,12(11):5576-5580.
APA Tongay, Sefaattin.,Zhou, Jian.,Ataca, Can.,Lo, Kelvin.,Matthews, Tyler S.,...&Wu, Junqiao.(2012).Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2.Nano Letters,12(11),5576-5580.
MLA Tongay, Sefaattin,et al."Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2".Nano Letters 12.11(2012):5576-5580.
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