SEMI OpenIR  > 中科院半导体材料科学重点实验室
Si delta doping inside InAs/GaAs quantum dots with different doping densities
Wang, Ke-Fan; Gu, Yongxian; Yang, Xiaoguang; Yang, Tao; Wang, Zhanguo
2012
Source PublicationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30Issue:4Pages:041808
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-23
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23934
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,et al. Si delta doping inside InAs/GaAs quantum dots with different doping densities[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,2012,30(4):041808.
APA Wang, Ke-Fan,Gu, Yongxian,Yang, Xiaoguang,Yang, Tao,&Wang, Zhanguo.(2012).Si delta doping inside InAs/GaAs quantum dots with different doping densities.Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures,30(4),041808.
MLA Wang, Ke-Fan,et al."Si delta doping inside InAs/GaAs quantum dots with different doping densities".Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 30.4(2012):041808.
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