| Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes | |
| Yiyun, Zhang; Enqing, Guo; Zhi, Li; Tongbo, Wei; Jing, Li; Xiaoyan, Yi; Guohong, Wang | |
| 2012 | |
| Source Publication | IEEE Photonics Technology Letters
 |
| Volume | 24Issue:2Pages:243-245 |
| Subject Area | 半导体器件 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23931 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | Yiyun, Zhang,Enqing, Guo,Zhi, Li,et al. Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes[J]. IEEE Photonics Technology Letters,2012,24(2):243-245. |
| APA | Yiyun, Zhang.,Enqing, Guo.,Zhi, Li.,Tongbo, Wei.,Jing, Li.,...&Guohong, Wang.(2012).Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes.IEEE Photonics Technology Letters,24(2),243-245. |
| MLA | Yiyun, Zhang,et al."Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes".IEEE Photonics Technology Letters 24.2(2012):243-245. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012030.pdf（384KB） | 限制开放 | License | Application Full Text | |||
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