Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes | |
Yiyun, Zhang; Enqing, Guo; Zhi, Li; Tongbo, Wei; Jing, Li; Xiaoyan, Yi; Guohong, Wang | |
2012 | |
Source Publication | IEEE Photonics Technology Letters
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Volume | 24Issue:2Pages:243-245 |
Subject Area | 半导体器件 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23931 |
Collection | 中科院半导体照明研发中心 |
Recommended Citation GB/T 7714 | Yiyun, Zhang,Enqing, Guo,Zhi, Li,et al. Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes[J]. IEEE Photonics Technology Letters,2012,24(2):243-245. |
APA | Yiyun, Zhang.,Enqing, Guo.,Zhi, Li.,Tongbo, Wei.,Jing, Li.,...&Guohong, Wang.(2012).Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes.IEEE Photonics Technology Letters,24(2),243-245. |
MLA | Yiyun, Zhang,et al."Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes".IEEE Photonics Technology Letters 24.2(2012):243-245. |
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