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Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes
Yiyun, Zhang; Enqing, Guo; Zhi, Li; Tongbo, Wei; Jing, Li; Xiaoyan, Yi; Guohong, Wang
2012
Source PublicationIEEE Photonics Technology Letters
Volume24Issue:2Pages:243-245
Subject Area半导体器件
Indexed ByEI
Language英语
Date Available2013-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23931
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Yiyun, Zhang,Enqing, Guo,Zhi, Li,et al. Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes[J]. IEEE Photonics Technology Letters,2012,24(2):243-245.
APA Yiyun, Zhang.,Enqing, Guo.,Zhi, Li.,Tongbo, Wei.,Jing, Li.,...&Guohong, Wang.(2012).Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes.IEEE Photonics Technology Letters,24(2),243-245.
MLA Yiyun, Zhang,et al."Light extraction efficiency improvement by curved GaN sidewalls in InGaN-based light-emitting diodes".IEEE Photonics Technology Letters 24.2(2012):243-245.
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