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Investigation on deep energy levels formed by sulphur implantation into silicon
Gao, Li-Peng; Han, Pei-De; Mao, Xue; Fan, Yu-Jie; Hu, Shao-Xu
2012
Source PublicationRengong Jingti Xuebao/Journal of Synthetic Crystals
Volume41Issue:SUPPL. 1Pages:372-375
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23930
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Gao, Li-Peng,Han, Pei-De,Mao, Xue,et al. Investigation on deep energy levels formed by sulphur implantation into silicon[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2012,41(SUPPL. 1):372-375.
APA Gao, Li-Peng,Han, Pei-De,Mao, Xue,Fan, Yu-Jie,&Hu, Shao-Xu.(2012).Investigation on deep energy levels formed by sulphur implantation into silicon.Rengong Jingti Xuebao/Journal of Synthetic Crystals,41(SUPPL. 1),372-375.
MLA Gao, Li-Peng,et al."Investigation on deep energy levels formed by sulphur implantation into silicon".Rengong Jingti Xuebao/Journal of Synthetic Crystals 41.SUPPL. 1(2012):372-375.
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