| Investigation on deep energy levels formed by sulphur implantation into silicon | |
| Gao, Li-Peng; Han, Pei-De; Mao, Xue; Fan, Yu-Jie; Hu, Shao-Xu | |
| 2012 | |
| Source Publication | Rengong Jingti Xuebao/Journal of Synthetic Crystals
 |
| Volume | 41Issue:SUPPL. 1Pages:372-375 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23930 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Gao, Li-Peng,Han, Pei-De,Mao, Xue,et al. Investigation on deep energy levels formed by sulphur implantation into silicon[J]. Rengong Jingti Xuebao/Journal of Synthetic Crystals,2012,41(SUPPL. 1):372-375. |
| APA | Gao, Li-Peng,Han, Pei-De,Mao, Xue,Fan, Yu-Jie,&Hu, Shao-Xu.(2012).Investigation on deep energy levels formed by sulphur implantation into silicon.Rengong Jingti Xuebao/Journal of Synthetic Crystals,41(SUPPL. 1),372-375. |
| MLA | Gao, Li-Peng,et al."Investigation on deep energy levels formed by sulphur implantation into silicon".Rengong Jingti Xuebao/Journal of Synthetic Crystals 41.SUPPL. 1(2012):372-375. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012001.pdf（299KB） | 限制开放 | License | Application Full Text | |||
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