| Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon | |
| Zhang, S.G; Zhang, X.W; Yin, Z.G; Wang, J.X; Si, F.T; Gao, H.L; Dong, J.J; Liu, X | |
| 2012 | |
| Source Publication | Journal of Applied Physics
 |
| Volume | 112Issue:1Pages:013112 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23922 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Zhang, S.G,Zhang, X.W,Yin, Z.G,et al. Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon[J]. Journal of Applied Physics,2012,112(1):013112. |
| APA | Zhang, S.G.,Zhang, X.W.,Yin, Z.G.,Wang, J.X.,Si, F.T.,...&Liu, X.(2012).Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon.Journal of Applied Physics,112(1),013112. |
| MLA | Zhang, S.G,et al."Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon".Journal of Applied Physics 112.1(2012):013112. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012093.pdf（1665KB） | 限制开放 | License | Application Full Text | |||
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