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Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon
Zhang, S.G; Zhang, X.W; Yin, Z.G; Wang, J.X; Si, F.T; Gao, H.L; Dong, J.J; Liu, X
2012
Source PublicationJournal of Applied Physics
Volume112Issue:1Pages:013112
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23922
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, S.G,Zhang, X.W,Yin, Z.G,et al. Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon[J]. Journal of Applied Physics,2012,112(1):013112.
APA Zhang, S.G.,Zhang, X.W.,Yin, Z.G.,Wang, J.X.,Si, F.T.,...&Liu, X.(2012).Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon.Journal of Applied Physics,112(1),013112.
MLA Zhang, S.G,et al."Optimization of electroluminescence from n-ZnO/AlN/p-GaN light-emitting diodes by tailoring Ag localized surface plasmon".Journal of Applied Physics 112.1(2012):013112.
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