SEMI OpenIR  > 中科院半导体材料科学重点实验室
Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC
Zhao, Wanshun; Sun, Guosheng; Wu, Hailei; Yan, Guoguo; Zheng, Liu; Dong, Lin; Wang, Lei; Liu, Xingfang; Yang, Lijun
2012
Source PublicationMaterials Science Forum
Volume717-720Pages:105-108
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23919
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhao, Wanshun,Sun, Guosheng,Wu, Hailei,et al. Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC[J]. Materials Science Forum,2012,717-720:105-108.
APA Zhao, Wanshun.,Sun, Guosheng.,Wu, Hailei.,Yan, Guoguo.,Zheng, Liu.,...&Yang, Lijun.(2012).Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC.Materials Science Forum,717-720,105-108.
MLA Zhao, Wanshun,et al."Development of vertical 32" LPCVD system for fast epitaxial growth on 4H-SiC".Materials Science Forum 717-720(2012):105-108.
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