SEMI OpenIR  > 中科院半导体材料科学重点实验室
Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates
Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Li, Xiguang; Wang, Zhanguo
2012
Source PublicationJournal of Physics D: Applied Physics
Volume45Issue:24Pages:245102
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-22
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23918
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dong, Lin,Sun, Guosheng,Zheng, Liu,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. Journal of Physics D: Applied Physics,2012,45(24):245102.
APA Dong, Lin.,Sun, Guosheng.,Zheng, Liu.,Liu, Xingfang.,Zhang, Feng.,...&Wang, Zhanguo.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.Journal of Physics D: Applied Physics,45(24),245102.
MLA Dong, Lin,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".Journal of Physics D: Applied Physics 45.24(2012):245102.
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