| Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates | |
| Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Li, Xiguang; Wang, Zhanguo | |
| 2012 | |
| Source Publication | Journal of Physics D: Applied Physics
 |
| Volume | 45Issue:24Pages:245102 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-22 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23918 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Dong, Lin,Sun, Guosheng,Zheng, Liu,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. Journal of Physics D: Applied Physics,2012,45(24):245102. |
| APA | Dong, Lin.,Sun, Guosheng.,Zheng, Liu.,Liu, Xingfang.,Zhang, Feng.,...&Wang, Zhanguo.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.Journal of Physics D: Applied Physics,45(24),245102. |
| MLA | Dong, Lin,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".Journal of Physics D: Applied Physics 45.24(2012):245102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012159.pdf（654KB） | 限制开放 | License | Application Full Text | |||
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