Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates | |
Dong, Lin; Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Li, Xiguang; Wang, Zhanguo | |
2012 | |
Source Publication | Journal of Physics D: Applied Physics
![]() |
Volume | 45Issue:24Pages:245102 |
Subject Area | 半导体材料 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-22 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23918 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Dong, Lin,Sun, Guosheng,Zheng, Liu,et al. Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates[J]. Journal of Physics D: Applied Physics,2012,45(24):245102. |
APA | Dong, Lin.,Sun, Guosheng.,Zheng, Liu.,Liu, Xingfang.,Zhang, Feng.,...&Wang, Zhanguo.(2012).Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates.Journal of Physics D: Applied Physics,45(24),245102. |
MLA | Dong, Lin,et al."Infrared reflectance study of 3C-SiC epilayers grown on silicon substrates".Journal of Physics D: Applied Physics 45.24(2012):245102. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
2012159.pdf(654KB) | 限制开放 | License | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment