SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface
Liu, Jian-Qing; Chen, Yong-Hai; Xu, Bo; Wang, Zhan-Guo
2012
Source PublicationAdvanced Materials Research
Volume341-342Pages:73-76
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23917
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,et al. Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface[J]. Advanced Materials Research,2012,341-342:73-76.
APA Liu, Jian-Qing,Chen, Yong-Hai,Xu, Bo,&Wang, Zhan-Guo.(2012).Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface.Advanced Materials Research,341-342,73-76.
MLA Liu, Jian-Qing,et al."Growth of InAs quantum wires with Ga-assisted deoxidation on cleaved-edge GaAs (110) surface".Advanced Materials Research 341-342(2012):73-76.
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