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High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser
Zhang, Yu; Wang, Yongbin; Xu, Yingqiang; Xu, Yun; Niu, Zhichuan; Song, Guofeng
2012
Source PublicationJournal of Semiconductors
Volume33Issue:4Pages:044006
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23915
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,et al. High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser[J]. Journal of Semiconductors,2012,33(4):044006.
APA Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,Xu, Yun,Niu, Zhichuan,&Song, Guofeng.(2012).High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser.Journal of Semiconductors,33(4),044006.
MLA Zhang, Yu,et al."High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser".Journal of Semiconductors 33.4(2012):044006.
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