| High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser | |
| Zhang, Yu; Wang, Yongbin; Xu, Yingqiang; Xu, Yun; Niu, Zhichuan; Song, Guofeng | |
| 2012 | |
| Source Publication | Journal of Semiconductors
 |
| Volume | 33Issue:4Pages:044006 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23915 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,et al. High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser[J]. Journal of Semiconductors,2012,33(4):044006. |
| APA | Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,Xu, Yun,Niu, Zhichuan,&Song, Guofeng.(2012).High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser.Journal of Semiconductors,33(4),044006. |
| MLA | Zhang, Yu,et al."High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser".Journal of Semiconductors 33.4(2012):044006. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012252.pdf（282KB） | 限制开放 | License | Application Full Text | |||
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