High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser | |
Zhang, Yu; Wang, Yongbin; Xu, Yingqiang; Xu, Yun; Niu, Zhichuan; Song, Guofeng | |
2012 | |
Source Publication | Journal of Semiconductors
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Volume | 33Issue:4Pages:044006 |
Subject Area | 半导体材料 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23915 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,et al. High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser[J]. Journal of Semiconductors,2012,33(4):044006. |
APA | Zhang, Yu,Wang, Yongbin,Xu, Yingqiang,Xu, Yun,Niu, Zhichuan,&Song, Guofeng.(2012).High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser.Journal of Semiconductors,33(4),044006. |
MLA | Zhang, Yu,et al."High-temperature (T = 80 °c) operation of a 2 μm InGaSb - AlGaAsSb quantum well laser".Journal of Semiconductors 33.4(2012):044006. |
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