SEMI OpenIR  > 中科院半导体材料科学重点实验室
InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm
Li, Xin-Kun; Liang, De-Chun; Jin, Peng; An, Qi; Wei, Heng; Wu, Jian; Wang, Zhan-Guo
2012
Source PublicationChinese Physics B
Volume21Issue:2Pages:028102
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23904
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Li, Xin-Kun,Liang, De-Chun,Jin, Peng,et al. InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm[J]. Chinese Physics B,2012,21(2):028102.
APA Li, Xin-Kun.,Liang, De-Chun.,Jin, Peng.,An, Qi.,Wei, Heng.,...&Wang, Zhan-Guo.(2012).InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm.Chinese Physics B,21(2),028102.
MLA Li, Xin-Kun,et al."InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm".Chinese Physics B 21.2(2012):028102.
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