| Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system | |
| Ma, Hui; Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai | |
| 2012 | |
| Source Publication | Journal of Physics: Conference Series
 |
| Volume | 400Issue:PART 4Pages:042041 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23903 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Ma, Hui,Jiang, Chongyun,Liu, Yu,et al. Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system[J]. Journal of Physics: Conference Series,2012,400(PART 4):042041. |
| APA | Ma, Hui,Jiang, Chongyun,Liu, Yu,Yu, Jinling,&Chen, Yonghai.(2012).Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system.Journal of Physics: Conference Series,400(PART 4),042041. |
| MLA | Ma, Hui,et al."Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system".Journal of Physics: Conference Series 400.PART 4(2012):042041. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012042.pdf（680KB） | 限制开放 | License | Application Full Text | |||
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