Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system | |
Ma, Hui; Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai | |
2012 | |
Source Publication | Journal of Physics: Conference Series
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Volume | 400Issue:PART 4Pages:042041 |
Subject Area | 半导体材料 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23903 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Ma, Hui,Jiang, Chongyun,Liu, Yu,et al. Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system[J]. Journal of Physics: Conference Series,2012,400(PART 4):042041. |
APA | Ma, Hui,Jiang, Chongyun,Liu, Yu,Yu, Jinling,&Chen, Yonghai.(2012).Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system.Journal of Physics: Conference Series,400(PART 4),042041. |
MLA | Ma, Hui,et al."Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system".Journal of Physics: Conference Series 400.PART 4(2012):042041. |
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