SEMI OpenIR  > 中科院半导体材料科学重点实验室
Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system
Ma, Hui; Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai
2012
Source PublicationJournal of Physics: Conference Series
Volume400Issue:PART 4Pages:042041
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23903
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ma, Hui,Jiang, Chongyun,Liu, Yu,et al. Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system[J]. Journal of Physics: Conference Series,2012,400(PART 4):042041.
APA Ma, Hui,Jiang, Chongyun,Liu, Yu,Yu, Jinling,&Chen, Yonghai.(2012).Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system.Journal of Physics: Conference Series,400(PART 4),042041.
MLA Ma, Hui,et al."Temperature dependence of circular photogalvanic effect in GaAs/Al 0.3Ga0.7As two-dimensional electron system".Journal of Physics: Conference Series 400.PART 4(2012):042041.
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