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Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
Le, L.C; Zhao, D.G; Jiang, D.S; Zhang, S.M; Yang, H; Li, L; Wu, L.L; Chen, P; Liu, Z.S; Li, Z.C; Fan, Y.M; Zhu, J.J; Wang, H
2012
Source PublicationApplied Physics Letters
Volume101Issue:25Pages:252110
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23902
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Le, L.C,Zhao, D.G,Jiang, D.S,et al. Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes[J]. Applied Physics Letters,2012,101(25):252110.
APA Le, L.C.,Zhao, D.G.,Jiang, D.S.,Zhang, S.M.,Yang, H.,...&Wang, H.(2012).Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes.Applied Physics Letters,101(25),252110.
MLA Le, L.C,et al."Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes".Applied Physics Letters 101.25(2012):252110.
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