SEMI OpenIR  > 半导体超晶格国家重点实验室
Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots
Wang, Lijuan; He, Jifang; Shang, Xiangjun; Li, Mifeng; Yu, Ying; Zha, Guowei; Ni, Haiqiao; Niu, Zhichuan
2012
Source PublicationSemiconductor Science and Technology
Volume27Issue:11Pages:115010
Subject Area半导体物理
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23897
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang, Lijuan,He, Jifang,Shang, Xiangjun,et al. Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots[J]. Semiconductor Science and Technology,2012,27(11):115010.
APA Wang, Lijuan.,He, Jifang.,Shang, Xiangjun.,Li, Mifeng.,Yu, Ying.,...&Niu, Zhichuan.(2012).Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots.Semiconductor Science and Technology,27(11),115010.
MLA Wang, Lijuan,et al."Enhanced tunneling in the GaAs p+-n+junction by embedding InAs quantum dots".Semiconductor Science and Technology 27.11(2012):115010.
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