A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures | |
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun | |
2012 | |
Source Publication | Applied Physics Letters
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Volume | 101Issue:18Pages:182102 |
Subject Area | 半导体材料 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23896 |
Collection | 中科院半导体材料科学重点实验室 |
Recommended Citation GB/T 7714 | Ding, Jieqin,Wang, Xiaoliang,Xiao, Hongling,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. Applied Physics Letters,2012,101(18):182102. |
APA | Ding, Jieqin.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Chen, Hong.,...&Hou, Xun.(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.Applied Physics Letters,101(18),182102. |
MLA | Ding, Jieqin,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".Applied Physics Letters 101.18(2012):182102. |
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