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A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures
Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun
2012
Source PublicationApplied Physics Letters
Volume101Issue:18Pages:182102
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23896
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Ding, Jieqin,Wang, Xiaoliang,Xiao, Hongling,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. Applied Physics Letters,2012,101(18):182102.
APA Ding, Jieqin.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Chen, Hong.,...&Hou, Xun.(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.Applied Physics Letters,101(18),182102.
MLA Ding, Jieqin,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".Applied Physics Letters 101.18(2012):182102.
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