| A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures | |
| Ding, Jieqin; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Chen, Hong; Bi, Yang; Deng, Qinwen; Zhang, Jingwen; Hou, Xun | |
| 2012 | |
| Source Publication | Applied Physics Letters
 |
| Volume | 101Issue:18Pages:182102 |
| Subject Area | 半导体材料 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23896 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Ding, Jieqin,Wang, Xiaoliang,Xiao, Hongling,et al. A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures[J]. Applied Physics Letters,2012,101(18):182102. |
| APA | Ding, Jieqin.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Chen, Hong.,...&Hou, Xun.(2012).A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures.Applied Physics Letters,101(18),182102. |
| MLA | Ding, Jieqin,et al."A 2 nm low temperature GaN spacer to improve the transport properties of two-dimensional electron gas in AlGaN/InAlN/AlN/GaN heterostructures".Applied Physics Letters 101.18(2012):182102. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012048.pdf（1209KB） | 限制开放 | License | Application Full Text | |||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment