| Detection and analysis of residual strain of epitaxial Ge films on Si substrates | |
| Zhou, Zhi-Wen; Li, Cheng; Yu, Jin-Zhong | |
| 2012 | |
| Source Publication | Guangdianzi Jiguang/Journal of Optoelectronics Laser
 |
| Volume | 23Issue:9Pages:1749-1753 |
| Subject Area | 光电子学 |
| Indexed By | EI |
| Language | 英语 |
| Date Available | 2013-04-19 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23895 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Zhou, Zhi-Wen,Li, Cheng,Yu, Jin-Zhong. Detection and analysis of residual strain of epitaxial Ge films on Si substrates[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2012,23(9):1749-1753. |
| APA | Zhou, Zhi-Wen,Li, Cheng,&Yu, Jin-Zhong.(2012).Detection and analysis of residual strain of epitaxial Ge films on Si substrates.Guangdianzi Jiguang/Journal of Optoelectronics Laser,23(9),1749-1753. |
| MLA | Zhou, Zhi-Wen,et al."Detection and analysis of residual strain of epitaxial Ge films on Si substrates".Guangdianzi Jiguang/Journal of Optoelectronics Laser 23.9(2012):1749-1753. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012049.pdf（4644KB） | 限制开放 | License | Application Full Text | |||
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