Detection and analysis of residual strain of epitaxial Ge films on Si substrates | |
Zhou, Zhi-Wen; Li, Cheng; Yu, Jin-Zhong | |
2012 | |
Source Publication | Guangdianzi Jiguang/Journal of Optoelectronics Laser
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Volume | 23Issue:9Pages:1749-1753 |
Subject Area | 光电子学 |
Indexed By | EI |
Language | 英语 |
Date Available | 2013-04-19 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23895 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Zhou, Zhi-Wen,Li, Cheng,Yu, Jin-Zhong. Detection and analysis of residual strain of epitaxial Ge films on Si substrates[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2012,23(9):1749-1753. |
APA | Zhou, Zhi-Wen,Li, Cheng,&Yu, Jin-Zhong.(2012).Detection and analysis of residual strain of epitaxial Ge films on Si substrates.Guangdianzi Jiguang/Journal of Optoelectronics Laser,23(9),1749-1753. |
MLA | Zhou, Zhi-Wen,et al."Detection and analysis of residual strain of epitaxial Ge films on Si substrates".Guangdianzi Jiguang/Journal of Optoelectronics Laser 23.9(2012):1749-1753. |
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