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Detection and analysis of residual strain of epitaxial Ge films on Si substrates
Zhou, Zhi-Wen; Li, Cheng; Yu, Jin-Zhong
2012
Source PublicationGuangdianzi Jiguang/Journal of Optoelectronics Laser
Volume23Issue:9Pages:1749-1753
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23895
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zhou, Zhi-Wen,Li, Cheng,Yu, Jin-Zhong. Detection and analysis of residual strain of epitaxial Ge films on Si substrates[J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser,2012,23(9):1749-1753.
APA Zhou, Zhi-Wen,Li, Cheng,&Yu, Jin-Zhong.(2012).Detection and analysis of residual strain of epitaxial Ge films on Si substrates.Guangdianzi Jiguang/Journal of Optoelectronics Laser,23(9),1749-1753.
MLA Zhou, Zhi-Wen,et al."Detection and analysis of residual strain of epitaxial Ge films on Si substrates".Guangdianzi Jiguang/Journal of Optoelectronics Laser 23.9(2012):1749-1753.
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