SEMI OpenIR  > 中科院半导体材料科学重点实验室
Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation
Zhou, Wenfei; Ye, Xiaoling; Xu, Bo; Zhang, Shizhu; Wang, Zhanguo
2012
Source PublicationJournal of Semiconductors
Volume33Issue:10Pages:102002
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23894
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhou, Wenfei,Ye, Xiaoling,Xu, Bo,et al. Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation[J]. Journal of Semiconductors,2012,33(10):102002.
APA Zhou, Wenfei,Ye, Xiaoling,Xu, Bo,Zhang, Shizhu,&Wang, Zhanguo.(2012).Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation.Journal of Semiconductors,33(10),102002.
MLA Zhou, Wenfei,et al."Protection effect of a SiO2 layer in Al0.85Ga 0.15As wet oxidation".Journal of Semiconductors 33.10(2012):102002.
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