SEMI OpenIR  > 中科院半导体材料科学重点实验室
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
Zhang, H.Y; Chen, Y.H; Wang, Z.G
2012
Source PublicationJournal of Bionanoscience
Volume6Issue:1Pages:200-216
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23889
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhang, H.Y,Chen, Y.H,Wang, Z.G. Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy[J]. Journal of Bionanoscience,2012,6(1):200-216.
APA Zhang, H.Y,Chen, Y.H,&Wang, Z.G.(2012).Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy.Journal of Bionanoscience,6(1),200-216.
MLA Zhang, H.Y,et al."Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy".Journal of Bionanoscience 6.1(2012):200-216.
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