| The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes | |
| Qiao YB (Qiao, Yanbin); Feng SW (Feng, Shiwei); Xiong C (Xiong, Cong); Ma XY (Ma, Xiaoyu); Zhu H (Zhu, Hui); Guo CS (Guo, Chunsheng); Wei GH (Wei, Guanghua) | |
| 2012 | |
| Source Publication | JOURNAL OF APPLIED PHYSICS
 |
| Volume | 112Issue:11Pages:113104 |
| Subject Area | 半导体器件 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-04-18 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23884 |
| Collection | 光电子器件国家工程中心 |
| Recommended Citation GB/T 7714 | Qiao YB ,Feng SW ,Xiong C ,et al. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113104. |
| APA | Qiao YB .,Feng SW .,Xiong C .,Ma XY .,Zhu H .,...&Wei GH .(2012).The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes.JOURNAL OF APPLIED PHYSICS,112(11),113104. |
| MLA | Qiao YB ,et al."The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes".JOURNAL OF APPLIED PHYSICS 112.11(2012):113104. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012016.pdf（1427KB） | 限制开放 | License | Application Full Text | |||
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