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The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes
Qiao YB (Qiao, Yanbin); Feng SW (Feng, Shiwei); Xiong C (Xiong, Cong); Ma XY (Ma, Xiaoyu); Zhu H (Zhu, Hui); Guo CS (Guo, Chunsheng); Wei GH (Wei, Guanghua)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume112Issue:11Pages:113104
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-04-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23884
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
Qiao YB ,Feng SW ,Xiong C ,et al. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113104.
APA Qiao YB .,Feng SW .,Xiong C .,Ma XY .,Zhu H .,...&Wei GH .(2012).The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes.JOURNAL OF APPLIED PHYSICS,112(11),113104.
MLA Qiao YB ,et al."The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes".JOURNAL OF APPLIED PHYSICS 112.11(2012):113104.
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