The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes | |
Qiao YB (Qiao, Yanbin); Feng SW (Feng, Shiwei); Xiong C (Xiong, Cong); Ma XY (Ma, Xiaoyu); Zhu H (Zhu, Hui); Guo CS (Guo, Chunsheng); Wei GH (Wei, Guanghua) | |
2012 | |
Source Publication | JOURNAL OF APPLIED PHYSICS
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Volume | 112Issue:11Pages:113104 |
Subject Area | 半导体器件 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-04-18 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23884 |
Collection | 光电子器件国家工程中心 |
Recommended Citation GB/T 7714 | Qiao YB ,Feng SW ,Xiong C ,et al. The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes[J]. JOURNAL OF APPLIED PHYSICS,2012,112(11):113104. |
APA | Qiao YB .,Feng SW .,Xiong C .,Ma XY .,Zhu H .,...&Wei GH .(2012).The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes.JOURNAL OF APPLIED PHYSICS,112(11),113104. |
MLA | Qiao YB ,et al."The impact of the stress induced by lateral spatial hole burning on the degradation of broad-area AlGaAs/GaAs laser diodes".JOURNAL OF APPLIED PHYSICS 112.11(2012):113104. |
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