SEMI OpenIR  > 中科院半导体材料科学重点实验室
Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
Wei W (Wei, Wei); Qin ZX (Qin, Zhixin); Fan SF (Fan, Shunfei); Li ZW (Li, Zhiwei); Shi K (Shi, Kai); Zhu QS (Zhu, Qinsheng); Zhang GY (Zhang, Guoyi)
2012
Source PublicationNANOSCALE RESEARCH LETTERS
Volume7Pages:562
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-04-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23880
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Wei W ,Qin ZX ,Fan SF ,et al. Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy[J]. NANOSCALE RESEARCH LETTERS,2012,7:562.
APA Wei W .,Qin ZX .,Fan SF .,Li ZW .,Shi K .,...&Zhang GY .(2012).Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.NANOSCALE RESEARCH LETTERS,7,562.
MLA Wei W ,et al."Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy".NANOSCALE RESEARCH LETTERS 7(2012):562.
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