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High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability
Cao, Yulian1; Ji, Haiming2; Xu, Pengfei2; Gu, Yongxian2; Ma, Wenquan1; Yang, Tao2
2012
Source PublicationOptics Letters
Volume37Issue:19Pages:4071-4073
Subject Area半导体材料
Indexed ByEI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23873
Collection纳米光电子实验室
Recommended Citation
GB/T 7714
Cao, Yulian1,Ji, Haiming2,Xu, Pengfei2,et al. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability[J]. Optics Letters,2012,37(19):4071-4073.
APA Cao, Yulian1,Ji, Haiming2,Xu, Pengfei2,Gu, Yongxian2,Ma, Wenquan1,&Yang, Tao2.(2012).High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability.Optics Letters,37(19),4071-4073.
MLA Cao, Yulian1,et al."High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability".Optics Letters 37.19(2012):4071-4073.
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