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Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
Lu LW (Lu, Liwu); Su SC (Su, Shichen); Ling CC (Ling, Chi-Chung); Xu SJ (Xu, Shijie); Zhao DG (Zhao, Degang); Zhu JJ (Zhu, Jianjun); Yang H (Yang, Hui); Wang JN (Wang, Jiannong); Gey WK (Gey, Weikun)
2012
Source PublicationAPPLIED PHYSICS EXPRESS
Volume5Issue:9Pages:091001
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23871
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Lu LW ,Su SC ,Ling CC ,et al. Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique[J]. APPLIED PHYSICS EXPRESS,2012,5(9):091001.
APA Lu LW .,Su SC .,Ling CC .,Xu SJ .,Zhao DG .,...&Gey WK .(2012).Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique.APPLIED PHYSICS EXPRESS,5(9),091001.
MLA Lu LW ,et al."Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique".APPLIED PHYSICS EXPRESS 5.9(2012):091001.
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