Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique | |
Lu LW (Lu, Liwu); Su SC (Su, Shichen); Ling CC (Ling, Chi-Chung); Xu SJ (Xu, Shijie); Zhao DG (Zhao, Degang); Zhu JJ (Zhu, Jianjun); Yang H (Yang, Hui); Wang JN (Wang, Jiannong); Gey WK (Gey, Weikun) | |
2012 | |
Source Publication | APPLIED PHYSICS EXPRESS
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Volume | 5Issue:9Pages:091001 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-04-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23871 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | Lu LW ,Su SC ,Ling CC ,et al. Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique[J]. APPLIED PHYSICS EXPRESS,2012,5(9):091001. |
APA | Lu LW .,Su SC .,Ling CC .,Xu SJ .,Zhao DG .,...&Gey WK .(2012).Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique.APPLIED PHYSICS EXPRESS,5(9),091001. |
MLA | Lu LW ,et al."Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique".APPLIED PHYSICS EXPRESS 5.9(2012):091001. |
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