SEMI OpenIR  > 中科院半导体材料科学重点实验室
Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Feng ZH (Feng, Zhihong); Meng LG (Meng, Lingguo); Lv YJ (Lv, Yuanjie); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Wang ZG (Wang, Zhanguo)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume112Issue:5Pages:054513
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23866
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Luan CB ,Lin ZJ ,Feng ZH ,et al. Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors[J]. JOURNAL OF APPLIED PHYSICS,2012,112(5):054513.
APA Luan CB .,Lin ZJ .,Feng ZH .,Meng LG .,Lv YJ .,...&Wang ZG .(2012).Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors.JOURNAL OF APPLIED PHYSICS,112(5),054513.
MLA Luan CB ,et al."Polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors".JOURNAL OF APPLIED PHYSICS 112.5(2012):054513.
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