SEMI OpenIR  > 集成光电子学国家重点实验室
Effect of light Si-doping on the near-band-edge emissions in high quality GaN
Le LC (Le, L. C.); Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Wu LL (Wu, L. L.); Li L (Li, L.); Chen P (Chen, P.); Liu ZS (Liu, Z. S.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Zhang SM (Zhang, S. M.); Yang H (Yang, H.)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume112Issue:5Pages:053104
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23865
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Le LC ,Zhao DG ,Jiang DS ,et al. Effect of light Si-doping on the near-band-edge emissions in high quality GaN[J]. JOURNAL OF APPLIED PHYSICS,2012,112(5):053104.
APA Le LC .,Zhao DG .,Jiang DS .,Wu LL .,Li L .,...&Yang H .(2012).Effect of light Si-doping on the near-band-edge emissions in high quality GaN.JOURNAL OF APPLIED PHYSICS,112(5),053104.
MLA Le LC ,et al."Effect of light Si-doping on the near-band-edge emissions in high quality GaN".JOURNAL OF APPLIED PHYSICS 112.5(2012):053104.
Files in This Item:
File Name/Size DocType Version Access License
2012102.pdf(1999KB) 限制开放LicenseApplication Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Le LC (Le, L. C.)]'s Articles
[Zhao DG (Zhao, D. G.)]'s Articles
[Jiang DS (Jiang, D. S.)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Le LC (Le, L. C.)]'s Articles
[Zhao DG (Zhao, D. G.)]'s Articles
[Jiang DS (Jiang, D. S.)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Le LC (Le, L. C.)]'s Articles
[Zhao DG (Zhao, D. G.)]'s Articles
[Jiang DS (Jiang, D. S.)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.