SEMI OpenIR  > 半导体超晶格国家重点实验室
Defect of Te-doped GaSb layers grown by molecular beam epitaxy
Chen Y (Chen Yan); Deng AH (Deng Ai-Hong); Tang B (Tang Bao); Wang GW (Wang Guo-Wei); Xu YQ (Xu Ying-Qiang); Niu ZC (Niu Zhi-Chuan)
2012
Source PublicationJOURNAL OF INFRARED AND MILLIMETER WAVES
Volume31Issue:4Pages:298-301
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23857
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Chen Y ,Deng AH ,Tang B ,et al. Defect of Te-doped GaSb layers grown by molecular beam epitaxy[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2012,31(4):298-301.
APA Chen Y ,Deng AH ,Tang B ,Wang GW ,Xu YQ ,&Niu ZC .(2012).Defect of Te-doped GaSb layers grown by molecular beam epitaxy.JOURNAL OF INFRARED AND MILLIMETER WAVES,31(4),298-301.
MLA Chen Y ,et al."Defect of Te-doped GaSb layers grown by molecular beam epitaxy".JOURNAL OF INFRARED AND MILLIMETER WAVES 31.4(2012):298-301.
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