SEMI OpenIR  > 中科院半导体照明研发中心
Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface
Sun B (Sun, Bo); Zhao LX (Zhao, Lixia); Wei TB (Wei, Tongbo); Yi XY (Yi, Xiaoyan); Liu ZQ (Liu, Zhiqiang); Wang GH (Wang, Guohong); Li JM (Li, Jinmin); Yi FT (Yi, Futing)
2012
Source PublicationOPTICS EXPRESS
Volume20Issue:17Pages:18537-18544
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23854
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Sun B ,Zhao LX ,Wei TB ,et al. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface[J]. OPTICS EXPRESS,2012,20(17):18537-18544.
APA Sun B .,Zhao LX .,Wei TB .,Yi XY .,Liu ZQ .,...&Yi FT .(2012).Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface.OPTICS EXPRESS,20(17),18537-18544.
MLA Sun B ,et al."Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface".OPTICS EXPRESS 20.17(2012):18537-18544.
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