| Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature | |
| Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) | |
| 2012 | |
| Source Publication | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
 |
| Volume | 45Pages:173-176 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-04-02 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23850 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | Cui K ,Ma WQ ,Huang JL ,et al. Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2012,45:173-176. |
| APA | Cui K .,Ma WQ .,Huang JL .,Wei Y .,Zhang YH .,...&Yang T .(2012).Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,45,173-176. |
| MLA | Cui K ,et al."Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 45(2012):173-176. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012133.pdf（722KB） | 限制开放 | License | Application Full Text | |||
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