Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature | |
Cui K (Cui, Kai); Ma WQ (Ma, Wenquan); Huang JL (Huang, Jianliang); Wei Y (Wei, Yang); Zhang YH (Zhang, Yanhua); Cao YL (Cao, Yulian); Gu YX (Gu, Yongxian); Yang T (Yang, Tao) | |
2012 | |
Source Publication | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
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Volume | 45Pages:173-176 |
Subject Area | 半导体材料 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-04-02 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23850 |
Collection | 纳米光电子实验室 |
Recommended Citation GB/T 7714 | Cui K ,Ma WQ ,Huang JL ,et al. Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2012,45:173-176. |
APA | Cui K .,Ma WQ .,Huang JL .,Wei Y .,Zhang YH .,...&Yang T .(2012).Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,45,173-176. |
MLA | Cui K ,et al."Multilayered type-II GaSb/GaAs self-assembled quantum dot structure with 1.35 mu m light emission at room temperature".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 45(2012):173-176. |
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