SEMI OpenIR  > 中科院半导体材料科学重点实验室
Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors
Lv YJ (Lv, Yuanjie); Lin ZJ (Lin, Zhaojun); Meng LG (Meng, Lingguo); Luan CB (Luan, Chongbiao); Cao ZF (Cao, Zhifang); Yu YX (Yu, Yingxia); Feng ZH (Feng, Zhihong); Wang ZG (Wang, Zhanguo)
2012
Source PublicationNANOSCALE RESEARCH LETTERS
Volume7Pages:434
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23849
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lv YJ ,Lin ZJ ,Meng LG ,et al. Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. NANOSCALE RESEARCH LETTERS,2012,7:434.
APA Lv YJ .,Lin ZJ .,Meng LG .,Luan CB .,Cao ZF .,...&Wang ZG .(2012).Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors.NANOSCALE RESEARCH LETTERS,7,434.
MLA Lv YJ ,et al."Influence of the ratio of gate length to drain-to-source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors".NANOSCALE RESEARCH LETTERS 7(2012):434.
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