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Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers
Sun HH (Sun He-Hui); Guo FY (Guo Feng-Yun); Li DY (Li Deng-Yue); Wang L (Wang Lu); Zhao DG (Zhao De-Gang); Zhao LC (Zhao Lian-Cheng)
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:9Pages:096101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23847
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Sun HH ,Guo FY ,Li DY ,et al. Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers[J]. CHINESE PHYSICS LETTERS,2012,29(9):096101.
APA Sun HH ,Guo FY ,Li DY ,Wang L ,Zhao DG ,&Zhao LC .(2012).Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers.CHINESE PHYSICS LETTERS,29(9),096101.
MLA Sun HH ,et al."Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers".CHINESE PHYSICS LETTERS 29.9(2012):096101.
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