SEMI OpenIR  > 中科院半导体材料科学重点实验室
Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells
Gu YX (Gu, Yong-Xian); Yang XG (Yang, Xiao-Guang); Ji HM (Ji, Hai-Ming); Xu PF (Xu, Peng-Fei); Yang T (Yang, Tao)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:8Pages:081118
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23843
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Gu YX ,Yang XG ,Ji HM ,et al. Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells[J]. APPLIED PHYSICS LETTERS,2012,101(8):081118.
APA Gu YX ,Yang XG ,Ji HM ,Xu PF ,&Yang T .(2012).Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells.APPLIED PHYSICS LETTERS,101(8),081118.
MLA Gu YX ,et al."Theoretical study of the effects of InAs/GaAs quantum dot layer's position in i-region on current-voltage characteristic in intermediate band solar cells".APPLIED PHYSICS LETTERS 101.8(2012):081118.
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