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Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation
Mao X (Mao Xue); Han PD (Han Pei-De); Hu SX (Hu Shao-Xu); Gao LP (Gao Li-Peng); Li XY (Li Xin-Yi); Mi YH (Mi Yan-Hong); Liang P (Liang Peng)
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:9Pages:097101
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23837
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Mao X ,Han PD ,Hu SX ,et al. Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation[J]. CHINESE PHYSICS LETTERS,2012,29(9):097101.
APA Mao X .,Han PD .,Hu SX .,Gao LP .,Li XY .,...&Liang P .(2012).Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation.CHINESE PHYSICS LETTERS,29(9),097101.
MLA Mao X ,et al."Optical and Electrical Properties of Single-Crystal Si Supersaturated with Se by Ion Implantation".CHINESE PHYSICS LETTERS 29.9(2012):097101.
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