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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics
Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo)
2012
Source PublicationCHINESE PHYSICS B
Volume21Issue:9Pages:097104
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23830
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lu YJ ,Lin ZJ ,Yu YX ,et al. A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics[J]. CHINESE PHYSICS B,2012,21(9):097104.
APA Lu YJ .,Lin ZJ .,Yu YX .,Meng LG .,Cao ZF .,...&Wang ZG .(2012).A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics.CHINESE PHYSICS B,21(9),097104.
MLA Lu YJ ,et al."A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics".CHINESE PHYSICS B 21.9(2012):097104.
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