| Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors | |
| Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo) | |
| 2012 | |
| Source Publication | APPLIED PHYSICS LETTERS
 |
| Volume | 101Issue:11Pages:113501 |
| Subject Area | 半导体材料 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23828 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | Luan CB ,Lin ZJ ,Lv YJ ,et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS LETTERS,2012,101(11):113501. |
| APA | Luan CB .,Lin ZJ .,Lv YJ .,Meng LG .,Yu YX .,...&Wang ZG .(2012).Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.APPLIED PHYSICS LETTERS,101(11),113501. |
| MLA | Luan CB ,et al."Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".APPLIED PHYSICS LETTERS 101.11(2012):113501. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012099.pdf（817KB） | 限制开放 | License | Application Full Text | |||
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