SEMI OpenIR  > 中科院半导体材料科学重点实验室
Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Luan CB (Luan, Chongbiao); Lin ZJ (Lin, Zhaojun); Lv YJ (Lv, Yuanjie); Meng LG (Meng, Lingguo); Yu YX (Yu, Yingxia); Cao ZF (Cao, Zhifang); Chen H (Chen, Hong); Wang ZG (Wang, Zhanguo)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:11Pages:113501
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23828
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Luan CB ,Lin ZJ ,Lv YJ ,et al. Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors[J]. APPLIED PHYSICS LETTERS,2012,101(11):113501.
APA Luan CB .,Lin ZJ .,Lv YJ .,Meng LG .,Yu YX .,...&Wang ZG .(2012).Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors.APPLIED PHYSICS LETTERS,101(11),113501.
MLA Luan CB ,et al."Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors".APPLIED PHYSICS LETTERS 101.11(2012):113501.
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