SEMI OpenIR  > 中科院半导体材料科学重点实验室
Purification of metallurgical silicon through directional solidification in a large cold crucible
Liu T (Liu, Tong); Dong ZY (Dong, Zhiyuan); Zhao YW (Zhao, Youwen); Wang J (Wang, Jun); Chen T (Chen, Teng); Xie H (Xie, Hui); Li J (Li, Jian); Ni HJ (Ni, Haijiang); Huo DX (Huo, Dianxin)
2012
Source PublicationJOURNAL OF CRYSTAL GROWTH
Volume355Issue:1Pages:145-150
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23827
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Liu T ,Dong ZY ,Zhao YW ,et al. Purification of metallurgical silicon through directional solidification in a large cold crucible[J]. JOURNAL OF CRYSTAL GROWTH,2012,355(1):145-150.
APA Liu T .,Dong ZY .,Zhao YW .,Wang J .,Chen T .,...&Huo DX .(2012).Purification of metallurgical silicon through directional solidification in a large cold crucible.JOURNAL OF CRYSTAL GROWTH,355(1),145-150.
MLA Liu T ,et al."Purification of metallurgical silicon through directional solidification in a large cold crucible".JOURNAL OF CRYSTAL GROWTH 355.1(2012):145-150.
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