SEMI OpenIR  > 集成光电子学国家重点实验室
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping
Liu Z (Liu, Zhi); Hu WX (Hu, Weixuan); Su SJ (Su, Shaojian); Li C (Li, Chong); Li CB (Li, Chuanbo); Xue CL (Xue, Chunlai); Li YM (Li, Yaming); Zuo YH (Zuo, Yuhua); Cheng BW (Cheng, Buwen); Wang QM (Wang, Qiming)
2012
Source PublicationOPTICS EXPRESS
Volume20Issue:20Pages:22327-22333
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23824
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Liu Z ,Hu WX ,Su SJ ,et al. Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping[J]. OPTICS EXPRESS,2012,20(20):22327-22333.
APA Liu Z .,Hu WX .,Su SJ .,Li C .,Li CB .,...&Wang QM .(2012).Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping.OPTICS EXPRESS,20(20),22327-22333.
MLA Liu Z ,et al."Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping".OPTICS EXPRESS 20.20(2012):22327-22333.
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