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Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing
Hu SX (Hu, Shaoxu); Han PD (Han, Peide); Wang S (Wang, Shuai); Mao X (Mao, Xue); Li XY (Li, Xinyi); Gao LP (Gao, Lipeng)
2012
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume27Issue:10Pages:102002
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23818
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Hu SX ,Han PD ,Wang S ,et al. Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(10):102002.
APA Hu SX ,Han PD ,Wang S ,Mao X ,Li XY ,&Gao LP .(2012).Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(10),102002.
MLA Hu SX ,et al."Improved photoresponse characteristics in Se-doped Si photodiodes fabricated using picosecond pulsed laser mixing".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.10(2012):102002.
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