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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal
Wang LX (Wang, Lanxiang); Su SJ (Su, Shaojian); Wang W (Wang, Wei); Yang Y (Yang, Yue); Tong Y (Tong, Yi); Liu B (Liu, Bin); Guo PF (Guo, Pengfei); Gong X (Gong, Xiao); Zhang GZ (Zhang, Guangze); Xue CL (Xue, Chunlai); Cheng BW (Cheng, Buwen); Han GQ (Han, Genquan); Yeo YC (Yeo, Yee-Chia)
2012
Source PublicationIEEE ELECTRON DEVICE LETTERS
Volume33Issue:11Pages:1529-1531
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23812
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang LX ,Su SJ ,Wang W ,et al. Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal[J]. IEEE ELECTRON DEVICE LETTERS,2012,33(11):1529-1531.
APA Wang LX .,Su SJ .,Wang W .,Yang Y .,Tong Y .,...&Yeo YC .(2012).Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal.IEEE ELECTRON DEVICE LETTERS,33(11),1529-1531.
MLA Wang LX ,et al."Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal".IEEE ELECTRON DEVICE LETTERS 33.11(2012):1529-1531.
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