Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition | |
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) | |
2012 | |
Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
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Volume | 540Pages:46-48 |
Subject Area | 光电子学 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-27 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23808 |
Collection | 集成光电子学国家重点实验室 |
Recommended Citation GB/T 7714 | Zhao DG ,Jiang DS ,Le LC ,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,540:46-48. |
APA | Zhao DG .,Jiang DS .,Le LC .,Wu LL .,Li L .,...&Yang H .(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,540,46-48. |
MLA | Zhao DG ,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 540(2012):46-48. |
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