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Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui)
2012
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
Volume540Pages:46-48
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23808
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Zhao DG ,Jiang DS ,Le LC ,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,540:46-48.
APA Zhao DG .,Jiang DS .,Le LC .,Wu LL .,Li L .,...&Yang H .(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,540,46-48.
MLA Zhao DG ,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 540(2012):46-48.
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