| Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition | |
| Zhao DG (Zhao, D. G.); Jiang DS (Jiang, D. S.); Le LC (Le, L. C.); Wu LL (Wu, L. L.); Li L (Li, L.); Zhu JJ (Zhu, J. J.); Wang H (Wang, H.); Liu ZS (Liu, Z. S.); Zhang SM (Zhang, S. M.); Jia QJ (Jia, Q. J.); Yang H (Yang, Hui) | |
| 2012 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| Volume | 540Pages:46-48 |
| Subject Area | 光电子学 |
| Indexed By | SCI |
| Language | 英语 |
| Date Available | 2013-03-27 |
| Document Type | 期刊论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/23808 |
| Collection | 集成光电子学国家重点实验室 |
| Recommended Citation GB/T 7714 | Zhao DG ,Jiang DS ,Le LC ,et al. Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2012,540:46-48. |
| APA | Zhao DG .,Jiang DS .,Le LC .,Wu LL .,Li L .,...&Yang H .(2012).Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition.JOURNAL OF ALLOYS AND COMPOUNDS,540,46-48. |
| MLA | Zhao DG ,et al."Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition".JOURNAL OF ALLOYS AND COMPOUNDS 540(2012):46-48. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 2012039.pdf（332KB） | 限制开放 | License | Application Full Text | |||
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