SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability
Cao YL (Cao, Yulian); Ji HM (Ji, Haiming); Xu PF (Xu, Pengfei); Gu YX (Gu, Yongxian); Ma WQ (Ma, Wenquan); Yang T (Yang, Tao)
2012
Source PublicationOPTICS LETTERS
Volume37Issue:19Pages:4071-4073
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23802
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Cao YL ,Ji HM ,Xu PF ,et al. High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability[J]. OPTICS LETTERS,2012,37(19):4071-4073.
APA Cao YL ,Ji HM ,Xu PF ,Gu YX ,Ma WQ ,&Yang T .(2012).High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability.OPTICS LETTERS,37(19),4071-4073.
MLA Cao YL ,et al."High-brightness 1.3 mu m InAs/GaAs quantum dot tapered laser with high temperature stability".OPTICS LETTERS 37.19(2012):4071-4073.
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