SEMI OpenIR  > 集成光电子学国家重点实验室
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition
Wang JM (Wang, Jiaming); Xu FJ (Xu, Fujun); Huang CC (Huang, Chengcheng); Xu ZY (Xu, Zhengyu); Zhang X (Zhang, Xia); Wang Y (Wang, Yan); Ge WK (Ge, Weikun); Wang XQ (Wang, Xinqiang); Yang ZJ (Yang, Zhijian); Shen B (Shen, Bo); Li W (Li, Wei); Wang WY (Wang, Weiying); Jin P (Jin, Peng)
2012
Source PublicationAPPLIED PHYSICS EXPRESS
Volume5Issue:10Pages:101002
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2013-03-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23797
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Wang JM ,Xu FJ ,Huang CC ,et al. Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition[J]. APPLIED PHYSICS EXPRESS,2012,5(10):101002.
APA Wang JM .,Xu FJ .,Huang CC .,Xu ZY .,Zhang X .,...&Jin P .(2012).Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition.APPLIED PHYSICS EXPRESS,5(10),101002.
MLA Wang JM ,et al."Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition".APPLIED PHYSICS EXPRESS 5.10(2012):101002.
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