SEMI OpenIR  > 半导体超晶格国家重点实验室
Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
Wang LJ (Wang, Lijuan); He JF (He, Jifang); Shang XJ (Shang, Xiangjun); Li MF (Li, Mifeng); Yu Y (Yu, Ying); Zha GW (Zha, Guowei); Ni HQ (Ni, Haiqiao); Niu ZC (Niu, Zhichuan)
2012
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume27Issue:11Pages:115010
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23784
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wang LJ ,He JF ,Shang XJ ,et al. Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(11):115010.
APA Wang LJ .,He JF .,Shang XJ .,Li MF .,Yu Y .,...&Niu ZC .(2012).Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(11),115010.
MLA Wang LJ ,et al."Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.11(2012):115010.
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