Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots

	Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
	Wang LJ (Wang, Lijuan); He JF (He, Jifang); Shang XJ (Shang, Xiangjun); Li MF (Li, Mifeng); Yu Y (Yu, Ying); Zha GW (Zha, Guowei); Ni HQ (Ni, Haiqiao); Niu ZC (Niu, Zhichuan)
	2012
Source Publication	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	27 Issue:11 Pages:115010
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2013-03-26
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23784
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Wang LJ ,He JF ,Shang XJ ,et al. Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2012,27(11):115010.
APA	Wang LJ .,He JF .,Shang XJ .,Li MF .,Yu Y .,...&Niu ZC .(2012).Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,27(11),115010.
MLA	Wang LJ ,et al."Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 27.11(2012):115010.

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