Knowledge Management System Of Institute of Semiconductors,CAS
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2 | |
Tongay S (Tongay, Sefaattin); Zhou J (Zhou, Jian); Ataca C (Ataca, Can); Lo K (Lo, Kelvin); Matthews TS (Matthews, Tyler S.); Li JB (Li, Jingbo); Grossman JC (Grossman, Jeffrey C.); Wu JQ (Wu, Junqiao) | |
2012 | |
Source Publication | NANO LETTERS
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Volume | 12Issue:11Pages:5576-5580 |
Subject Area | 半导体物理 |
Indexed By | SCI |
Language | 英语 |
Date Available | 2013-03-26 |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/23781 |
Collection | 半导体超晶格国家重点实验室 |
Recommended Citation GB/T 7714 | Tongay S ,Zhou J ,Ataca C ,et al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. NANO LETTERS,2012,12(11):5576-5580. |
APA | Tongay S .,Zhou J .,Ataca C .,Lo K .,Matthews TS .,...&Wu JQ .(2012).Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2.NANO LETTERS,12(11),5576-5580. |
MLA | Tongay S ,et al."Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2".NANO LETTERS 12.11(2012):5576-5580. |
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2012047.pdf(985KB) | 限制开放 | License | Application Full Text |
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