Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2

	Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2
	Tongay S (Tongay, Sefaattin); Zhou J (Zhou, Jian); Ataca C (Ataca, Can); Lo K (Lo, Kelvin); Matthews TS (Matthews, Tyler S.); Li JB (Li, Jingbo); Grossman JC (Grossman, Jeffrey C.); Wu JQ (Wu, Junqiao)
	2012
Source Publication	NANO LETTERS
Volume	12 Issue:11 Pages:5576-5580
Subject Area	半导体物理
Indexed By	SCI
Language	英语
Date Available	2013-03-26
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/23781
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	Tongay S ,Zhou J ,Ataca C ,et al. Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2[J]. NANO LETTERS,2012,12(11):5576-5580.
APA	Tongay S .,Zhou J .,Ataca C .,Lo K .,Matthews TS .,...&Wu JQ .(2012).Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2.NANO LETTERS,12(11),5576-5580.
MLA	Tongay S ,et al."Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe2 versus MoS2".NANO LETTERS 12.11(2012):5576-5580.

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