SEMI OpenIR  > 半导体超晶格国家重点实验室
Band modification in (Ga, Mn) As evidenced by new measurement scheme - photoresistance magnetic circular dichroism
Huang XJ (Huang, X. J.); Wang LG (Wang, L. G.); Chen L (Chen, L.); Zhao JH (Zhao, J. H.); Zheng HZ (Zheng, H. Z.)
2012
Source PublicationEUROPEAN PHYSICAL JOURNAL B
Volume85Issue:11Pages:381
Indexed BySCI
Language英语
Date Available2013-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23778
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Huang XJ ,Wang LG ,Chen L ,et al. Band modification in (Ga, Mn) As evidenced by new measurement scheme - photoresistance magnetic circular dichroism[J]. EUROPEAN PHYSICAL JOURNAL B,2012,85(11):381.
APA Huang XJ ,Wang LG ,Chen L ,Zhao JH ,&Zheng HZ .(2012).Band modification in (Ga, Mn) As evidenced by new measurement scheme - photoresistance magnetic circular dichroism.EUROPEAN PHYSICAL JOURNAL B,85(11),381.
MLA Huang XJ ,et al."Band modification in (Ga, Mn) As evidenced by new measurement scheme - photoresistance magnetic circular dichroism".EUROPEAN PHYSICAL JOURNAL B 85.11(2012):381.
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